A/D converter, solid-state imaging device and camera system

ABSTRACT

An A/D converter includes: plural comparators to which reference voltages as ramp waves different from each other are supplied, which are configured to compare the supplied reference voltages with an analog input signal; and plural latches arranged so as to correspond to the plural comparators, which are configured to count comparison time of the corresponding comparators, to stop counting when an outputs of the comparator is inverted and to store the count value, wherein the plural reference voltages are off set by an arbitrary voltage at the same time point.

CROSS REFERENCES TO RELATED APPLICATIONS

This is a Continuation Application of U.S. patent application Ser. No.13/707,151, filed on Dec. 6, 2012 now U.S. Pat. No. 8,704,898, issued onApr. 22, 2014, which is a Continuation Application of U.S. patentapplication Ser. No. 12/659,799, filed on Mar. 22, 2010, now U.S. Pat.No. 8,358,349, issued on Jan. 22, 2013, which claims priority fromJapanese Patent Application JP 2009-100604 filed with the JapanesePatent Office on Apr. 17, 2009 the entire contents of which beingincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an A/D converter which can be appliedto a solid-state imaging device typified by a CMOS image sensor, asolid-state imaging device and a camera system.

2. Description of the Related Art

As for the CMOS image sensor, the same manufacturing process as commonCMOS-type integrated circuits can be used for the manufacture thereof aswell as driving can be performed by a single power source, and further,an analog circuit and a logic circuit using the CMOS process can bemixed on the same chip.

Accordingly, the CMOS image sensor has plural big advantages such thatthe number of peripheral ICs can be reduced.

The mainstream of a CCD output circuit is 1-ch output using a FDamplifier having a floating diffusion layer (FD).

On the other hand, the CMOS image sensor has FD amplifiers at respectivepixels, the mainstream of the output is a column-parallel output type inwhich a given one row in a pixel array is selected and these pixels aresimultaneously read in the column direction.

This is because it is difficult to obtain sufficient drive performanceby the FD amplifiers arranged in the pixels and thus it is necessary toreduce the data rate, therefore, parallel processing is advantageous.

An awful lot of readout (output) circuits of pixel signals in thecolumn-parallel output CMOS image sensor have been proposed.

One of the most advanced forms of these circuits is a type having ananalog-digital converter (hereinafter, abbreviated as ADC) in eachcolumn, in which pixel signals are taken out as digital signals.

The CMOS image sensor on which the column-parallel type ADCs are mountedis disclosed in, for example, JP-A-2005-278135 (Patent Document 1) andW. Yang et. al., “An Integrated 800×600 CMOS Image System” ISSCC Digestof Technical Papers, pp. 304-305, February 1999) (Non-patent document1).

FIG. 1 is a block diagram showing a configuration example of acolumn-parallel ADC mounted solid-state imaging device (CMOS imagesensor).

A solid-state imaging device 1 includes a pixel section 2, a verticalscanning circuit 3, a horizontal transfer scanning circuit 4 and acolumn processing circuit group 5 having an ADC group as shown in FIG.1.

The solid-state imaging device 1 further includes a digital-analogconverter (hereinafter, abbreviated as DAC) 6 and amplifier circuits(S/A) 7.

The pixel section 2 is configured by unit pixels 21 each having aphotodiode (photoelectric conversion element) and an in-pixel amplifierbeing arranged in a matrix state.

In the column processing circuit group 5, plural columns of columnprocessing circuits 51 each forming the ADC in each column are arranged.

Each column processing circuit (ADC) 51 includes a comparator 51-1comparing a reference voltage Vslop which is a ramp waveform (RAMP)obtained by changing a reference voltage generated by the DAC 6 into astep-shape with an analog signal obtained from pixels of each row linethrough a vertical signal line.

Each column processing circuit 51 further includes a latch (memory)which counts comparison time of the comparator 51-1 and holds the countresult.

The column processing circuits 51 have an n-bit digital signalconverting function and are arranged with respect to respective verticalsignal lines (column line) 8-1 to 8-n, which constitutes acolumn-parallel ADC block.

Outputs of respective memories 51-2 are connected to horizontal signallines 9 having, for example, a k-bit width. K-pieces of amplifiercircuits 7 corresponding to the horizontal transfer lines 9 arearranged.

FIG. 2 shows a timing chart of the circuit of FIG. 1.

In each column processing circuit (ADC) 51, an analog signal (potentialVs1) read to the vertical signal line 8 is compared with the referencevoltage Vslop which changes into a step-shape in the comparator 51-1.

At this time, counting is performed in the latch 51-2 until levels ofthe analog potential Vs1 and the reference voltage Vslop intersect andan output from the comparator 51-1 is inverted, then, the potential ofthe vertical signal line (analog signal) Vs1 is converted into a digitalsignal (A/D converted).

The A/D conversion is made twice in one reading.

In the first conversion, reset levels (P phase) of the unit pixels 21are read to the vertical signal lines 8 (8-1 to 8-n) and A/D conversionis made.

The reset levels P-phase include variations according to pixels.

In the second conversion, signals (D phase) which have beenphotoelectrically converted in respective unit pixels 21 are read to thevertical signal lines 8 (8-1 to 8-n) and A/D conversion is made.

The D phase also includes variations according to pixels, therefore, (Dphase level-P phase level) is executed to thereby realize correlateddouble sampling (CDS).

Signals converted into digital signals are recorded in the latches(memories) 51-2, sequentially read to the amplifier circuits 7 throughthe horizontal transfer lines 9 by the horizontal transfer scanningcircuit 4 and finally outputted.

Accordingly, column-parallel output processing is performed.

SUMMARY OF THE INVENTION

However, in the solid-state imaging device having the aboveconfiguration, a ramp wave to be the reference for knowing potentials ofP phase and D phase is one. P-phase reading time and D-phase readingtime are determined by a gradient of the reference voltage Vslop whichis the ramp wave as an output of the DAC6.

Therefore, the reading time can be reduced when the gradient of the rampwave is made steep.

For that purpose, it is necessary to improve operation speed of the DAC6.

However, it is not easy to improve the operation speed of the DAC 6which is an analog circuit while maintaining the precision, therefore,it is difficult to speedup the reading.

When the variation amount in each step of the ramp waves outputted bythe DAC 6, namely, the step width is increased, the gradient of the rampwave becomes steep, therefore, the reading time can be reduced withoutimproving the operation speed of the DAC 6.

However, 1 LSB after the digital conversion is also increased merely byincreasing the step width, which reduces the A/D conversion accuracy.

Thus, it is desirable to provide an A/D converter, a solid-state imagingdevice and a camera system capable of reducing reading time as well asrealizing A/D conversion with high bit precision.

According to an embodiment of the invention, there is provided an A/Dconverter including plural comparators to which reference voltages asramp waves different from each other are supplied, which are configuredto compare the supplied reference voltages with an analog input signal,and plural latches arranged so as to correspond to the pluralcomparators, which are configured to count comparison time of thecorresponding comparators, to stop counting when an output of thecomparator is inverted and to store the count values, in which theplural reference voltages are offset by an arbitrary voltage at the sametime point.

According to another embodiment of the invention, there is provided asolid-state imaging device including a pixel section in which pluralpixels performing photoelectric conversion are arranged in a matrixstate, and a pixel signal reading circuit performing reading of pixelsignals from plural pixels in the pixel section, in which the pixelsignal reading circuit has plural comparators to which plural referencevoltages as different ramp waves are supplied, which are configured tocompare the supplied reference voltages with an analog signal potentialread out from the pixel in a corresponding column, and plural latchesarranged so as to correspond to the plural comparators, which areconfigured to count comparison time of the corresponding comparators, tostop counting when an outputs of the comparator is inverted and storethe count value so as to correspond to column arrangement of pixels, andthe plural reference voltages are offset by an arbitrary voltage at thesame time point.

According to still another embodiment of the invention, there isprovided a camera system including a solid-state imaging device, and anoptical system imaging a subject image on the solid-state imagingdevice, in which the solid-state imaging device has a pixel section inwhich plural pixels performing photoelectric conversion are arranged ina matrix state, and a pixel signal reading circuit performing reading ofpixel signals from plural pixels in the pixel section, the pixel signalreading circuit has plural comparators to which plural referencevoltages as different ramp waves are supplied, which are configured tocompare the supplied reference voltages with an analog signal potentialread out from the pixel in a corresponding column, and plural latchesarranged so as to correspond to the plural comparators, which areconfigured to count comparison time of the corresponding comparators, tostop counting when an outputs of the comparator is inverted and to storethe count value so as to correspond to column arrangement of pixels, andthe plural reference voltages are offset by an arbitrary voltage at thesame time point.

According to the embodiments of the invention, reference voltages asramp waves different from each other which are offset by the arbitraryvoltage at the same time are compared with an analog input signal inplural comparators.

The plural latches count comparison time of respective comparators,which stops counting when the output of comparator is inverted andstores the count value.

According to the embodiments of the invention, it is possible to realizeA/D conversion with high bit precision without increasing a clockfrequency or increasing the reading time.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing a configuration example of acolumn-parallel ADC mounted solid-state imaging device (CMOS imagesensor).

FIG. 2 is a timing chart of a circuit of FIG. 1;

FIG. 3 is a block diagram showing a configuration example of acolumn-parallel ADC mounted solid-state imaging device (CMOS imagesensor) according to an embodiment of the invention;

FIG. 4 is a block diagram specifically showing an ADC group in thecolumn-parallel ADC mounted solid-state imaging device (CMOS imagesensor) in FIG. 3;

FIG. 5 is a diagram showing an example of a pixel in the CMOS imagesensor including four transistors according to the embodiment;

FIG. 6 is a view showing a first forming example of the first and secondreference voltages according to the embodiment;

FIG. 7 is a chart for explaining functions of a logic circuit accordingto the embodiment;

FIG. 8A to FIG. 8C are views schematically showing a first case (1), asecond case (2) and a third case (3) of FIG. 7;

FIG. 9 is a view showing a second forming example of the first andsecond reference voltages according to the embodiment;

FIG. 10 is a view showing a third forming example of first and secondreference voltages according to the embodiment;

FIG. 11 is a view showing a fourth forming example of the firstreference voltage;

FIG. 12 is a view showing a fifth forming example of first and secondreference voltages according to the embodiment; and

FIG. 13 is a view showing an example of a configuration of a camerasystem to which the solid-state imaging device according to anembodiment of the invention is applied.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiments of the invention will be explained withreference to the drawings.

The explanation will be made in the following order.

-   1. Entire configuration example of a solid-state imaging device-   2. Configuration example of a column ADC-   3. Example of forming plural reference voltages by a DAC-   4. Configuration example of a camera system

FIG. 3 is a block diagram showing a configuration example of acolumn-parallel ADC mounted solid-state imaging device (CMOS imagesensor) according to an embodiment of the invention.

FIG. 4 is a block diagram more specifically showing an ADC group in thecolumn-parallel ADC mounted solid-state imaging device (CMOS imagesensor) of FIG. 3.

1. Entire Configuration Example of a Solid-State Imaging Device

A solid-state imaging device 100 includes a pixel section 110 as animaging section, a vertical scanning circuit 120, a horizontal transferscanning circuit 130 and a timing control circuit 140 as shown in FIG. 3and FIG. 4.

The solid-state imaging device 100 further includes a column processingcircuit group 150 which is an ADC group as a pixel signal readingcircuit and a DAC bias circuit 160 including a DAC (analog-digitalconverter) 161.

The solid-state imaging device 100 includes amplifier circuits (S/A)170, a signal processing circuit 180 and line memories 190.

In the above components, the pixel section 110, the vertical scanningcircuit 120, the horizontal transfer scanning circuit 130, the ADC group150, the DAC bias circuit 160 and the amplifier circuits (S/A) 170 areconfigured by analog circuits.

The timing control circuit 140, the signal processing circuit 180 andthe line memories 190 are configured by digital circuits.

In the pixel section 110, plural unit pixels 110A each having aphotodiode (photoelectric conversion element) and a in-pixel amplifierare arranged two-dimensionally in a m×n matrix.

[Configuration Example of a Unit Pixel]

FIG. 5 is a diagram showing an example of a pixel in a CMOS image sensorincluding four transistors according to an embodiment of the invention.

The unit pixel 110A includes, for example, a photodiode 111 as aphotoelectric conversion element.

The unit pixel 110A includes four transistors, namely, a transfertransistor 112 as a transfer element, a reset transistor 113 as a resetelement, an amplification transistor 114 and a selection transistor 115as active elements with respect to one photodiode 111.

The photodiode 111 photoelectrically converts incident light intoelectric charges (electrons in this case) corresponding to the amount oflight.

The transfer transistor 112 is connected between the photodiode 111 anda floating diffusion FD as an output node.

The transfer transistor 112 transfers electrons photoelectricallyconverted in the photodiode 111 to the floating diffusion FD by a drivesignal TG being given to a gate thereof (transfer gate) through atransfer control line LTx.

The reset transistor 113 is connected between a power supply line LVDDand the floating diffusion FD.

The reset transistor 113 resets a potential of the floating diffusion FDinto a potential of the power supply line LVDD by a reset RST beinggiven to a gate thereof through a reset control line LRST.

A gate of the amplification transistor 114 is connected to the floatingdiffusion FD. The amplification transistor 114 is connected to thevertical signal line 116 through the selection transistor 115, forming asource follower with a constant-current source which is outside thepixel.

A control signal (an address signal or a selection signal) SEL is givento a gate of the selection transistor 115 through the selection controlline LSEL, thereby turning on the selection transistor 115.

When the selection transistor 115 is turned on, the amplificationtransistor 114 amplifies the potential of the floating diffusion FD andoutputs a voltage corresponding to the potential to the vertical signalline 116. The voltage outputted from respective pixels through thevertical signal line 116 is outputted to the column processing circuitgroup 150 as the pixel signal reading circuit.

The above operations are simultaneously performed in respective pixelsof one row in parallel because, for example, respective gates of thetransfer transistor 112, the reset transistor 113 and the selectiontransistor 115 are connected in each row.

The resent control line LRST, the transfer control line LTx and theselection control line LSEL are arranged in the pixel section 110 as oneset with respect to each row in the pixel arrangement.

These resent control line LRST, the transfer control line LTx and theselection control line LSEL are driven by the vertical scanning circuit120 as a pixel drive unit.

In the solid-state imaging device 100, the timing control circuit 140generating internal clocks as a control circuit for sequentially readingsignals from the pixel section 110, the vertical scanning circuit 120controlling row addresses as well as row scanning and the horizontaltransfer scanning circuit 130 controlling column addresses as well ascolumn scanning are arranged.

The timing control circuit 140 generates timing signals necessary forsignal processing in the pixel section 110, the vertical scanningcircuit 120, the horizontal transfer scanning circuit 130, the columnprocessing circuit group 150, the DAC bias circuit 160, the signalprocessing circuit 180 and the line memories 190.

In the pixel section 110, video and screen images are photoelectricallyconverted in respective pixel rows by accumulating and dischargingphotons using a line shutter, outputting the analog signals VSL torespective column processing circuits 151 in the column processingcircuit group 150.

2. Configuration Example of a Column ADC

The column processing circuit group 150 according to the embodiment hasa function of using plural reference voltages so as to be offset by anarbitrary voltage at the same time point in a process of converting theanalog signal VSL into a digital signal and calculating pluralcomparison results between the analog value and plural ramp waves.

In the column processing circuit group (column ADC), plural referencevoltages as ramp waves the step width of which is increased areprepared, not one reference voltage, and these plural voltages are usedby shifting them respectively, which enables high speed reading withoutreducing the A/D conversion accuracy.

On the other hand, in the column processing group (column ADC), pluralreference voltages as ramp waves the step width of which is notincreased are prepared, and these plural voltages are used by shiftingthem respectively, which enables high precision reading in the samereading time.

In the column processing circuit group (column ADC), it is possible toread out the high illumination side which is difficult to be viewed byhuman beings with low precision and with low power consumption by usingthe fact that 1 LSB is increased just by stopping supply of thereference voltage which is part of ramp waves.

In the embodiment, as one of examples which realize high speed readingby using the reference voltages which are plural ramp waveforms byshifting them, a method of using reference voltages Vslop1, Vslop2 whichare two ramp waves as shown in FIG. 4 will be explained.

In the column processing circuit group (ADC group) 150, plural columnsof column processing circuits (ADC) 151 which are ADC blocks arearranged.

That is, the column processing circuit group 150 has a k-bit digitalsignal conversion function, in which column parallel ADC blocks areconfigured by being arranged in respective vertical signal lines (columnlines) 116-1 to 116-n.

Each column processing circuit 151 includes first and second comparators152-1, 152-2 which compare one analog signal (potential VSL) obtainedfrom pixels through the vertical signal line 116 with two first andsecond reference voltages Vslop1, Vslop2.

The first and second reference voltages Vslop1, Vslop2 are formed byshifting the two ramp waves (a ramp wave RAMP1 and a ramp wave RAMP2) bythe original step width thereof, in which one ramp wave has twice thewidth of the other ramp wave as shown in FIG. 6.

Each column processing circuit 151 has a first latch (memory) 153-1including a counter counting comparison time of the first comparator152-1 and storing the count result of counter.

Each column processing circuit 151 has a second latch (memory) 153-2including a counter counting comparison time of the second comparator152-2 and storing the count result of counter.

Each column processing circuit 151 further includes a logic circuit 154distinguishes and detects given states after A/D conversion based on adigital value stored in the first latch 153-1 and a digital value storedin the second latch 153-2 to calculate a digital definite value.

The logic circuit 154 distinguishes and detects the following states(given states) after the A/D conversion in a half period of time withoutchanging 1 LSB. That is, the logic circuit 154 distinguishes and detects

-   (1) a case where only the comparison result with respect to the    second reference voltage Vslop 2 (ramp wave RAMP2) by the second    comparator 152-2 has been inverted-   (2) a case where both the comparison result with respect to the    first reference voltage Vslop 1 (ramp wave RAMP1) by the first    comparator 152-1 and the comparison result with respect to the    second reference voltage Vslop 2 (ramp wave RAMP2) by the second    comparator 152-2 have been inverted.

FIG. 7 is a chart for explaining the function of the logic circuitaccording to the embodiment.

FIG. 8A to FIG. 8C are views schematically showing a first case (1), asecond case (2) and a third case (3) of FIG. 7.

In this case, the normal technique using one reference voltage is shownas a comparative technique and a case where two reference voltages areused as in the embodiment is shown as a technique of the presentinvention.

The first case (1), the second case (2) and the third case (3) are threecases where the time “t” proceeds one by one, in which the step changescontinuously.

The logic circuit 154 can output the same values of the memory as thecomparative technique by using the following functions.

-   [1] A definite value VD1 of the first latch (memory) 153-1 and a    definite value VD2 of the second latch (memory) 153-2 are summed.-   [2] “1” is subtracted from the result of the sum.

An output VO is represented by the following formula.VO=VD1+VD2−1

In the first case, the definite value VD1 of the first memory 153-1 is“2”, and the definite value VD2 of the second memory 153-2 is “2”.

Accordingly, VO=2+2−1=3 based on the above (1).

The value is “3”, which is the same value as the comparative technique.

In the second case, the definite value VD1 of the first memory 153-1 is“3” and a definite value VD2 of the second memory 153-2 is “2”.

Accordingly, VO=3+2−1=4 based on the above (1).

The value is “4”, which is the same value as the comparative technique.

In the third case, the definite value VD1 of the first memory 153-1 is“3” and a definite value VD2 of the second memory 153-2 is “3”.

Accordingly, VO=3+3−1=5 based on the above (1).

The value is “5”, which is the same value as the comparative technique.

In the column processing circuit 151, the first comparator 152-1 invertsan output signal SCMP1 when levels of the analog potential VSL and thefirst reference voltage Vslop1 intersect.

The second comparator 152-2 inverts an output signal SCMP2 when levelsof the analog potential VSL and the second reference voltage Vslop2intersect.

The first latch (memory) 153-1 performs counting operation insynchronization with, for example, a clock CLK. The latch stops thecounting operation when the level of the output SCMP1 of the firstcomparator 152-1 is inverted, storing the value at that time.

The second latch (memory) 153-2 performs counting operation insynchronization with, for example, the clock CLK. The latch stops thecounting operation when the level of the output SCMP2 of the secondcomparator 152-2 is inverted, storing the value at that time.

Then, calculation processing using definite values of the first andsecond latches (memories) 153-1, 153-2 is performed in the logic circuit154 to be outputted.

Outputs of respective logic circuit 154 are connected to, for example,horizontal transfer lines LTRF having the k-bit width.

Then, k-pieces of amplifier circuits 170 corresponding to the horizontaltransfer lines LTRF and the signal processing circuit 180 are arranged.

As described above, the column ADC in the embodiment has the function ofusing plural reference voltages so as to be offset by an arbitraryvoltage at the same time point in a process of converting the analogsignal VSL into a digital signal and calculating plural comparisonresults between the analog value and plural ramp waves.

Accordingly, it is possible to perform A/D conversion at higher speedthan the normal configuration in the column ADC in the embodiment.

Since the execution time for the A/D conversion is reduced, thereduction of power consumption can be expected.

Additionally, the A/D conversion with high bit precision can be realizedwithout increasing the reading time.

After the above A/D conversion period is completed, by the horizontaltransfer circuit 130, data obtained by calculation in the logic circuits154 is transferred to the horizontal transfer lines LTRF, inputted tothe signal processing circuit 180 through the amplifier circuits 170 tothereby generate a two-dimensional image by a given signal processing.

In the horizontal transfer circuit 130, simultaneous parallel transferof several channels is performed for securing transfer speed.

The timing control circuit 140 generates timings necessary for signalprocessing in respective blocks such as the pixel section 110 and thecolumn processing circuit group 150.

The signal processing circuit 180 in the later step performs correctionof vertical line defects or dot defects by signals stored in the linememories 190, clamp processing of signals and digital signal processingsuch as parallel-serial conversion, compression, encoding, addition,averaging and intermittent operation.

In the line memories 190, digital signals to be transmitted torespective pixel rows are stored.

In the solid-state imaging device 100 according to the embodiment,digital output of the signal processing circuit 180 is transmitted asthe input of an ISP and a baseband LSI.

As a method used for reading pixel signals of the CMOS image sensor,there is a method in which signal charges to be a light signal generatedin the photoelectric conversion element such as the photodiode aretemporarily sampled in a capacitor in the later step through a MOSswitch arranged in the vicinity of the photodiode and are read.

In a sampling circuit, noise having the inverse correlation is normallyadded to the sampling capacitor value.

In pixels, noise is not generated in the sampling process because thesignal charges are completely transferred by using potential gradientwhen the signal charges are transferred to the sampling capacitor,however, noise is added when the voltage level of the capacitor in theprevious step is reset to a certain reference value.

As a method of removing noise, the correlated double sampling (CDS) isapplied.

This is the method in which the signal charges are read in a statebefore the sampling (reset level) and stored once, then, the signallevel after the sampling is read and subtraction is performed betweenthese levels to thereby remove noise.

3. Example of Forming Plural Reference Voltages by a DAC

Plural reference voltages (ramp waves) are generated by the DAC 161.

FIG. 6 is a view showing a first forming example of first and secondreference voltages Vslop1, Vslop2.

In the example of FIG. 6, the first and second reference voltagesVslop1, Vslop2 are formed by shifting the two ramp waves (the ramp waveRAMP1 and the ramp wave RAMP2) in which one ramp wave has twice thewidth of the other ramp wave by the original step width thereof.

The example of FIG. 6 is one example, and the first and second referencevoltages Vslop1, Vslop 2 can be formed, for example, as shown in FIG. 9to FIG. 12.

FIG. 9 is a view showing a second forming example of the first andsecond reference voltages Vslop1, Vslop2.

In the example of FIG. 9, two first and second reference voltagesVslop1, Vslop2 (two ramp waves) having the same step width are used byshifting them by a half of the original step width, thereby reading thesignal in the same period of time as in the case of FIG. 2 with doubleprecision.

FIG. 10 is a view showing a third forming example of first and secondreference voltages Vslop1, Vslop2.

In the example of FIG. 10, the supply of one of the reference voltages(ramp waves) is stopped at the last half of the reading of the D phase,thereby reading the high-illumination side which is difficult to beviewed by human beings with low power consumption though with lowprecision.

FIG. 11 is a view showing a fourth forming example of the firstreference voltage Vslop1 (refer to JP-A-2006-50231).

In the example of FIG. 11, the high illumination side can be lowprecision by using a single ramp wave the step width of which isvariable.

FIG. 12 is a view showing a fifth forming example of first and secondreference voltages Vslop1, Vlop2.

In the example of FIG. 11, the high illumination side can be lowprecision by using a single ramp wave the step width of which isvariable, however, a reference voltage (ramp wave) with an arbitraryamount of offset is combined to thereby increase the precision byapplying the invention.

As described above, the above circuit configuration of the DAC can beeasily realized though it is necessary to prepare plural DAC slopes.

Next, operations by the above configuration will be explained.

In the DAC 161, the first reference voltage Vslop1 and the secondreference voltage Vslop2 are generated during the P phase.

In each column processing circuit (ADC) 151, the analog signal potentialVSL read to the vertical signal line 116 is compared with the first andsecond reference voltages Vslop1, Vslop2 in the first and secondcomparators 152-1, 152-2 arranged at each column.

Counting is performed in the first and the second latches (memories)153-1, 153-2 until levels of the analog potential VSL and the first orsecond reference voltage Vslop1, Vslop2 intersect and outputs of thefirst and second comparators 152-1, 152-2 are inverted.

In the first latch (memory) 153-1, the counting operation is performed,for example, in synchronization with the clock CLK. The countingoperation is stopped when the level of the output SCMP1 of the firstcomparator 152-1 is inverted, and the value at that time is stored.

In the second latch (memory) 153-2, the counting operation is performed,for example, in synchronization with the clock CLK. The countingoperation is stopped when the level of the output SCMP2 of the secondcomparator 152-2 is inverted, and the value at that time is stored.

Then, the calculation processing using the definite values of the firstand the second latches (memories) 153-1, 153-2 is performed in the logiccircuit 154 to be outputted.

The reset level P phase includes variations according to pixels.

In the second time, signals photoelectrically converted in respectiveunit pixels 110A are read to the vertical signal lines 116 (116-1 to116-n) (D phase), and the A/D conversion is performed.

In the DAC 161, both the first and second reference voltages Vslop1,Vslop2 which are ramp waves are generated also during the D phase.

In each column processing circuit (ADC) 151, the analog signal potentialVSL read to the vertical signal line 116 is compared with the first andsecond reference voltages Vslop1, Vslop2 in the first and secondcomparators 152-1, 152-2 arranged at each column.

Counting is performed in the first and the second latches (memories)153-1, 153-2 until levels of the analog potential VSL and the first orsecond reference voltage Vslop1, Vslop2 intersect and outputs of thefirst and second comparators 152-1, 152-2 are inverted.

In the first latch (memory) 153-1, the counting operation is performed,for example, in synchronization with the clock CLK. The countingoperation is stopped when the level of the output SCMP1 of the firstcomparator 152-1 is inverted, and the value at that time is stored.

In the second latch (memory) 153-2, the counting operation is performed,for example, in synchronization with the clock CLK. The countingoperation is stopped when the level of the output SCMP2 of the secondcomparator 152-2 is inverted, and the value at that time is stored.

Then, the calculation processing using the definite values of the firstand the second latches (memories) 153-1, 153-2 is performed in the logiccircuit 154 to be outputted.

(D phase level-P phase level) is executed with the results ofconversions in the P-phase and the D phase, thereby realizing thecorrelated double sampling (CDS).

Signals converted into digital signals are sequentially read to theamplifier circuits 170 through the horizontal transfer lines LTRF by thehorizontal (column) transfer scanning circuit 130 and finally outputted.

Accordingly, the column parallel output processing is performed.

As described above, the solid-state imaging device according to theembodiment includes the pixel section 110 in which plural pixelsperforming photoelectric conversion are arranged in a matrix state, thepixel signal reading circuit (column processing circuit group, ADCgroup) 150 performing reading of data row by row from the pixel section110.

The solid-state imaging device 100 has the function of using pluralreference voltages (ramp waves) so as to be offset by an arbitraryvoltage at the same time point in a process of converting the analogsignal VSL into a digital signal and calculating plural comparisonresults between the analog value and plural ramp waves.

Specifically, each column processing circuit 151 includes the first andsecond comparators 152-1, 152-2 which compare one analog signal obtainedfrom pixels through the vertical signal line 116 with two first andsecond reference voltages Vslop1, Vslop2.

Each column processing circuit 151 includes the first latch (memory)153-1 including the counter which counts comparison time of the firstcomparator 152-1 and storing count results by the counter.

Each column processing circuit 151 includes the second latch (memory)153-2 including the counter which counts comparison time of the secondcomparator 152-2 and storing count results by the counter.

Each column processing circuit 151 further includes the logic circuit154 distinguishes and detects the given states after A/D conversionbased on the digital value stored in the first latch 153-1 and thedigital value stored in the second latch 153-2 to calculate a digitaldefinite value.

Therefore, the following advantages can be obtained according to theembodiment.

According to the embodiment, the A/D conversion can be performed athigher speed as compared with the normal configuration.

That is, the execution time necessary for the A/D conversion is reduced,therefore, reduction of power consumption can be expected.

Additionally, the A/D conversion with high bit precision can be realizedwithout increasing the reading time.

According to the embodiment, plural ramp waves the step width of whichis increased are used by shifting them to thereby realize the high-speedreading.

Also, plural ramp waves the step width of which is not changed are usedby shifting them to thereby realize the high precision reading.

Furthermore, the reading with the low precision and low powerconsumption can be realized by stopping part of ramp waves.

When the number of steps of two ramp waves is the same but the amplitudethereof is different, variation of the ramp wave having small amplitudein each voltage of one step is small, and it is necessary that thecomparator detects the minute voltage difference, therefore, it isnecessary to improve precision (sensitivity) by changing design and soon.

On the other hand, reference voltages which are two ramp waves in thepresent embodiment are formed to have the same number of steps and thesame amplitude, therefore, it is not necessary to improve the precisionof the comparator for detecting the voltage of one step.

Since the ramp waves having the same amplitude are used, there is nopossibility that the crossing with respect to signal voltages from thevertical signal lines (column lines) does not occur.

The solid-state imaging device having the above advantages can beapplied as an imaging device used for a digital camera and a videocamera.

4. Configuration Example of a Camera System

FIG. 13 is a view showing an example of a configuration of a camerasystem to which the solid-state imaging device according to anembodiment of the invention is applied.

A camera system 200 includes an imaging device 210 to which thesolid-state imaging device 100 according to the embodiment can beapplied as shown in FIG. 13.

The camera system 200 includes, for example, a lens 220 which imagesincident light (image light) on an imaging surface as an optical systemintroducing incident light to a pixel area of the imaging device 210(imaging a subject image).

The camera system 200 further includes drive circuit (DRV) 230 drivingthe imaging device 210 and a signal processing circuit (PRC) 240processing output signals of the imaging device 210.

The drive circuit 230 has a timing generator (not shown) generatingvarious timing signals including a start pulse and a clock pulse fordriving circuits in the imaging device 210, which drives the imagingdevice 210 by a given timing signal.

The signal processing circuit 240 performs given signal processing withrespect to output signals of the imaging device 210.

The image signals processed in the signal processing circuit 240 arerecorded in a recording medium such as a memory. Image informationrecorded in the recording medium is hard copied by a printer and thelike. The image signals processed in the signal processing circuit 240are projected on a monitor including a liquid crystal display and thelike as moving pictures.

As described above, in the imaging apparatus such as a digital stillcamera, the above described solid-state imaging device 100 is mounted asthe imaging device 210, thereby realizing a high precision camera.

The present application contains subject matter related to thatdisclosed in Japanese Priority Patent Application JP 2009-100604 filedin the Japan Patent Office on Apr. 17, 2009, the entire contents ofwhich is hereby incorporated by reference.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is:
 1. An AID converter comprising: plural latchesarranged so as to correspond to plural comparators for a single verticalline, respective ones of the plural latches being configured to countcomparison time of a corresponding comparator, to stop counting whenoutput of the corresponding comparator is inverted, and to store a countvalue, wherein the plural comparators respectively receive referencevoltages different from each other.
 2. The AID converter according toclaim 1, further comprising a logic circuit configured to distinguishand detect states based on respective digital values stored in theplural latches.
 3. The AID converter according to claim 2, wherein thelogic circuit is configured to distinguish and detect a first statewhere the outputs of only a portion of the plural comparators areinverted, and a second state where the outputs of all of the pluralcomparators are inverted.
 4. The AID converter according to claim 1,comprising a first latch configured to count comparison time of a firstcomparator and store a count result; and a second latch configured tocount comparison time of a second comparator and store the count result.5. The AID converter according to claim 1, wherein the pluralcomparators respectively receive reference voltages having a rampwaveform.
 6. A solid-state imaging device comprising: a pixel section inwhich plural pixels configured to perform photoelectric conversion arearranged in a matrix state; and a pixel signal reading circuitconfigured to perform reading of pixel signals from plural pixels in thepixel section, wherein the pixel signal reading circuit includes plurallatches arranged so as to correspond to plural comparators for a singlevertical signal line, respective ones of the plural latches beingconfigured to count comparison time of a corresponding comparator, tostop counting when output of the corresponding comparator is inverted,and to store a count value, and wherein the plural comparatorsrespectively receive reference voltages different from each other. 7.The solid-state imaging device according to claim 6, wherein the pixelsignal reading circuit further comprises a logic circuit configured todistinguish and detect states based on respective digital values storedin the plural latches.
 8. The solid-state imaging device according toclaim 7, wherein the logic circuit is configured to distinguish anddetect a first state where the outputs of only a portion of the pluralcomparators are inverted, and a second state where the outputs of all ofthe plural comparators are inverted.
 9. The solid-state imaging deviceaccording to claim 6, wherein the pixel signal reading circuitcomprises: a first latch configured to count comparison time of a firstcomparator and store a count result; and a second latch configured tocount comparison time of a second comparator and store the count result.10. The solid-state imaging device according to claim 6, wherein thereading of pixel signals is performed twice in each row.
 11. Thesolid-state imaging device according to claim 6, wherein the pluralcomparators respectively receive reference voltages having a rampwaveform.
 12. A camera system comprising: a solid-state imaging device;and an optical system configured to image a subject image on thesolid-state imaging device, wherein the solid-state imaging deviceincludes: a pixel section in which plural pixels configured to performphotoelectric conversion are arranged in a matrix state; and a pixelsignal reading circuit configured to perform reading of pixel signalsfrom plural pixels in the pixel section, wherein the pixel signalreading circuit includes plural latches arranged so as to correspond toplural comparators for a single vertical signal line, respective ones ofthe plural latches being configured to count comparison time of acorresponding comparator, to stop counting when output of thecorresponding comparator is inverted, and to store a count value, andwherein the plural comparators respectively receive reference voltagesdifferent from each other.
 13. The camera system according to claim 12,wherein the pixel signal reading circuit further comprises a logiccircuit configured to distinguish and detect states based on respectivedigital values stored in the plural latches.
 14. The camera systemaccording to claim 13, wherein the logic circuit is configured todistinguish and detect a first state where the outputs of only a portionof the plural comparators are inverted, and a second state where theoutputs of all of the plural comparators are inverted.
 15. The camerasystem according to claim 12, wherein the pixel signal reading circuitcomprises: a first latch configured to count comparison time of a firstcomparator and store a count result; and a second latch configured tocount comparison time of a second comparator and store the count result.16. The camera system according to claim 12, wherein the reading ofpixel signals is performed twice in each row.
 17. The camera systemaccording to claim 12, wherein the plural comparators respectivelyreceive reference voltages having a ramp waveform.